650V GaN FET PQFN Series

Description The TP65H070L Series 650V, 72mΩ Gallium Nitride (GaN) FET are normally-off devices. They combine state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. Features • JEDEC qualified GaN technology • Dynami

文件：1.17705 Mbytes 页数：13 Pages

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650V GaN FET PQFN Series

文件：1.19479 Mbytes 页数：13 Pages

TRANSPHORM

650V GaN FET PQFN Series

Description The TP65H070L Series 650V, 72mΩ Gallium Nitride (GaN) FET are normally-off devices. They combine state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. Features • JEDEC qualified GaN technology • Dynami

文件：1.17705 Mbytes 页数：13 Pages

TRANSPHORM

650V GaN FET PQFN Series

Description The TP65H070L Series 650V, 72mΩ Gallium Nitride (GaN) FET are normally-off devices. They combine state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. Features • JEDEC qualified GaN technology • Dynami

文件：1.17705 Mbytes 页数：13 Pages

TRANSPHORM

650V GaN FET PQFN Series

文件：1.19479 Mbytes 页数：13 Pages

TRANSPHORM