650V SuperGaN® FET in TOLL (source tab)

Description The TP65H050G4QS 650V, 50 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform us

文件：1.49252 Mbytes 页数：13 Pages

TRANSPHORM

650V SuperGaN® FET in TOLL (source tab)

Description The TP65H050G4QS 650V, 50 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform us

文件：1.49252 Mbytes 页数：13 Pages

TRANSPHORM

650V SuperGaN® FET in TO-247 (source tab)

Description The TP65H050G4WS 650V, 50 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform

文件：1.20397 Mbytes 页数：13 Pages

TRANSPHORM

650V SuperGaN® FET in TO-247 (source tab)

Description The TP65H050G4YS 650V, 50 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform

文件：1.21361 Mbytes 页数：12 Pages

TRANSPHORM