650V SuperGaN® FET in TOLL (source tab)

Description The TP65H050G4QS 650V, 50 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform us

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650V SuperGaN® FET in TOLL (source tab)

Description The TP65H050G4QS 650V, 50 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform us

文件：1.49252 Mbytes 页数：13 Pages

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650V 50mΩ SuperGaN FET TOLL 封装

TP65H050G4QS 650V 50mΩ 氮化镓 （GaN） FET 是一款使用瑞萨电子第四代平台构建的常闭器件。 它结合了最先进的高压 GaN HEMT 和低压硅 MOSFET 技术，提供卓越的可靠性和性能。\n瑞萨电子 GaN 通过更低的栅极电荷、更低的交越损耗和更小的反向恢复电荷，提供比硅更高的效率。\nTP65H050G4QS采用行业标准 TOLL 提供，具有 Kelvin 源和通用源封装配置。 • 第四代技术\n• 动态 RDS（on）eff 生产测试\n• 宽栅极安全裕度\n• 非常低的 QRR\n• 符合 RoHS 标准和无卤素包装\n• 提高功率密度\n• 总体降低系统成本\n• 使用常用的栅极驱动器轻松驱动\n• 具有更高 Vt 的 e 模式的引脚对引脚插入，可提高抗噪能力;

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650V SuperGaN® FET in TO-247 (source tab)

Description The TP65H050G4WS 650V, 50 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform

文件：1.20397 Mbytes 页数：13 Pages

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650V SuperGaN® FET in TO-247 (source tab)

Description The TP65H050G4YS 650V, 50 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform

文件：1.21361 Mbytes 页数：12 Pages

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