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DMMT5551

MATCHEDNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable(DMMT5401) •IdealforLowPowerAmplificationandSwitching •IntrinsicallyMatchedNPNPair(Note1) •2MatchedTolerance,hFE,VCE(SAT),VBE(SAT) •LeadFree/RoHSCompliant(Note4) •GreenDevice(Note5an

DIODESDiodes Incorporated

达尔科技

DMMT5551S

MATCHEDNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable(DMMT5401) •IdealforLowPowerAmplificationandSwitching •IntrinsicallyMatchedNPNPair(Note1) •2MatchedTolerance,hFE,VCE(SAT),VBE(SAT) •LeadFree/RoHSCompliant(Note4) •GreenDevice(Note5an

DIODESDiodes Incorporated

达尔科技

DMMT5551S

MATCHEDNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

DIODESDiodes Incorporated

达尔科技

DMMT5551-TP

Plastic-EncapsulateTransistors

Features •SurfaceMountSOT-363Package •200mWattsofPowerDissipation •IdealforMediumPowerAmplificationandSwitching •CaseMaterial:MoldedPlastic.ULFlammabilityClassificationRating94V-0andMSLRating1 •Marking:K4R

MCCMicro Commercial Components

美微科美微科半导体公司

DXT5551

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR

Description Designedforgeneralpurposeapplicationsrequiringhighbreakdownvoltages.

DCCOMDc Components

直流元件直流元件有限公司

DXT5551

160VNPNTRANSISTOR

DIODESDiodes Incorporated

达尔科技

DZT5551

NPNSURFACEMOUNTTRANSISTOR

Features •BVCEO>160V •BVEBO>6V •IC=600mAContinuousCollectorCurrent •LowSaturationVoltage(150mVmax@10mA) •hFEspecifiedupto50mAforahighgainholdup •ComplementaryPNPType:DZT5401 •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnti

DIODESDiodes Incorporated

达尔科技

DZT5551Q

160VNPNVOLTAGETRANSISTORINSOT223

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>160V •BVEBO>6V •IC=600mAContinuousCollectorCurrent •LowSaturationVoltage(150mVmax@10mA) •hFEspecifiedupto50mAforahighgain

DIODESDiodes Incorporated

达尔科技

E5551

HighPerformance,LowPowerAtmelAVR8-bitMicrocontrollerAdvancedRISCArchitecture

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

FFB5551

Dual-ChipNPNGeneral-PurposeAmplifier

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FFB5551

Dual-ChipNPNGeneralPurposeAmplifier

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FMB5551

NPNGeneralPurposeAmplifierSuperSOT-6SurfaceMountPackage

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FMB5551

NPNGeneralPurposeAmplifierSuperSOT-6SurfaceMountPackage

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FMB5551

FAIRCHILDSmallSignalTransistors

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FMBM5551

NPNGeneral-PurposeAmplifier

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FMBM5551

NPNGeneralPurposeAmplifier

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FMBS5551

NPNGeneralPurposeAmplifier

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FMBT5551

600mASiliconNPNEpitaxialPlanarTransistor

600mASiliconNPNEpitaxialPlanarTransistor Features •Highcollector-emitterbreakdienvoltage. (BVCEO=140V~160V@IC=1mA) •Thisdeviceisdesignedforgeneralpurposehighvoltage amplifiersandgasdischargedisplaydriving •Epitaxialplanardieconstruction •ComplememntaryPN

FORMOSAFormosa MS

美丽微半导体美丽微半导体股份有限公司

FMMT5551

SOT23NPNSILICONPLANARHIGHVOLTAGETRANSISTORS

PARTMARKINGDETAILS-FMMT5550-1FZ FMMT5551-ZG1 COMPLEMENTARYTYPES-FMMT5550-FMMT5400 FMMT5551-FMMT5401

ZetexZetex Semiconductors

捷特科半导体

GES5551

SILICONTRANSISTORS

ETCList of Unclassifed Manufacturers

未分类制造商

供应商型号品牌批号封装库存备注价格
3PEAK/思瑞浦
23+
SOT23-5
63225
绝对原厂原装,长期优势可定货
询价
3PEAK/思瑞浦
23+
SOT23-5
6000
原厂原装优势库存零漂运算放大器
询价
3PEAK/思瑞浦
23+
SOT23-5
12000
只做原装可追溯原厂优势可订货
询价
3PEAK
SOP8
3200
原装长期供货!
询价
3PEAK
22+23+
SOP8
43389
绝对原装正品全新进口深圳现货
询价
3PEAK/思瑞浦
22+
SOP8
20000
深圳原装现货正品有单价格可谈
询价
3PEAK
22+
SOP8
28600
只做原装正品现货假一赔十一级代理
询价
3PEAK
23+
SOP8
3000
原装正品假一罚百!可开增票!
询价
3PEAK/思瑞浦
SOIC-8
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
SHC
23+
SOP8
12000
询价
更多TP5551U-TR供应商 更新时间2024-6-15 13:26:00