首页 >TP5551U-TR>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
SOT-89-3LPlastic-EncapsulateTransistors Features Switchingandamplificationinhighvoltage Applicationssuchastelephony Lowcurrent(max.600mA) Highvoltage(max.180V) | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
SURFACEMOUNTNPNSILICONTRANSISTORS DESCRIPTION: TheCENTRALSEMICONDUCTORCXT5551typeisanNPNsilicontransistormanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforhighvoltageamplifierapplications. | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
NPNPlastic-EncapsulateTransistors Features ●Halogenfreeavailableuponrequestbyaddingsuffix-HF ●LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) ●PowerDissipation:PCM=0.5W(Tamb=25°C) ●CollectorCurrent:ICM=0.6A ●Collector-BaseVoltage:V(BR)CBO=180V ●Marking | MCCMicro Commercial Components 美微科美微科半导体公司 | MCC | ||
TRANSISTOR(NPN) FEATURES ●SwitchingandamplificationinhighvoltageApplicationssuchastelephony ●Lowcurrent(max.600mA) ●Highvoltage(max.180v) | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | HTSEMI | ||
ENHANCEDSPECIFICATIONSURFACEMOUNTNPNSILICONTRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCXT5551EisanNPNSiliconTransistor,packagedinanSOT-89case,designedforgeneralpurposeamplifierapplicationsrequiringhighbreakdownvoltage. FEATURES: •HighCollectorBreakdownVoltage250V •LowLeakageCurrent50nAMax •LowSaturationVol | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
SURFACEMOUNTHIGHCURRENTSILICONNPNTRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCXT5551HCtypeisanhighcurrentNPNsilicontransistormanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforhighvoltageandhighcurrentamplifierapplications. | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
SURFACEMOUNTDUAL,ISOLATEDNPNSILICONTRANSISTORS | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
SURFACEMOUNTDUAL,ISOLATEDNPNHIGHCURRENTSILICONTRANSISTORS | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
EpitaxialPlanarTransistor Description TheCZT5551isdesignedforgeneralpurposeapplicationsrequiringhighbreakdownvoltages. | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
NPNSiliconTransistor
| KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
NPNSILICONTRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCZT5551typeisanNPNsilicontransistormanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforhighvoltageamplifierapplications. | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
NPNSiliconEpitaxialPlanarTransistor Features HighVoltage HighVoltageAmplifierApplication | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟電子台舟電子股份有限公司 | TECHPUBLIC | ||
SOT-223Plastic-EncapsulateTransistors FEATURES HighVoltage HighVoltageAmplifierApplication | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
NPNSiliconMediumPowerTransistor FEATURES •HighVoltageAmplifierApplication •HighVoltage | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
ENHANCEDSPECIFICATIONSURFACEMOUNTNPNSILICONTRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCZT5551EisanNPNSiliconTransistor,packagedinanSOT-223case,designedforgeneralpurposeamplifierapplicationsrequiringhighbreakdownvoltage. MARKINGCODE:FULLPARTNUMBER FEATURES: •HighCollectorBreakdownVoltage250V •LowLeakageCurre | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
SURFACEMOUNTHIGHCURRENTSILICONNPNTRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCZT5551HCtypeisahighcurrentNPNsilicontransistormanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforhighvoltageandhighcurrentamplifierapplications. | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR | DCCOMDc Components 直流元件直流元件有限公司 | DCCOM | ||
MATCHEDNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
Plastic-EncapsulateTransistors Features •SurfaceMountSOT-363Package •200mWattsofPowerDissipation •IdealforMediumPowerAmplificationandSwitching •CaseMaterial:MoldedPlastic.ULFlammabilityClassificationRating94V-0andMSLRating1 •Marking:K4R | MCCMicro Commercial Components 美微科美微科半导体公司 | MCC | ||
MATCHEDNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR | DIODESDiodes Incorporated 达尔科技 | DIODES |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
3PEAK/思瑞浦 |
23+ |
SOT23-5 |
63225 |
绝对原厂原装,长期优势可定货 |
询价 | ||
3PEAK/思瑞浦 |
23+ |
SOT23-5 |
6000 |
原厂原装优势库存零漂运算放大器 |
询价 | ||
3PEAK/思瑞浦 |
23+ |
SOT23-5 |
12000 |
只做原装可追溯原厂优势可订货 |
询价 | ||
3PEAK |
SOP8 |
3200 |
原装长期供货! |
询价 | |||
3PEAK |
22+23+ |
SOP8 |
43389 |
绝对原装正品全新进口深圳现货 |
询价 | ||
3PEAK/思瑞浦 |
22+ |
SOP8 |
20000 |
深圳原装现货正品有单价格可谈 |
询价 | ||
3PEAK |
22+ |
SOP8 |
28600 |
只做原装正品现货假一赔十一级代理 |
询价 | ||
3PEAK |
23+ |
SOP8 |
3000 |
原装正品假一罚百!可开增票! |
询价 | ||
3PEAK/思瑞浦 |
SOIC-8 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | |||
SHC |
23+ |
SOP8 |
12000 |
询价 |
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