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TN0110N3

N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs

[TOPAZ SEMICONDUCTOR] N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs

文件:66.57 Kbytes 页数:2 Pages

ETCList of Unclassifed Manufacturers

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TN0110ND

N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs

[TOPAZ SEMICONDUCTOR] N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs

文件:66.57 Kbytes 页数:2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

TN0110ND

N-Channel Enhancement-Mode Vertical DMOS FETs

Features ■ Low threshold — 2.0V max. ■ High input impedance ■ Low input capacitance — 50pF typical ■ Fast switching speeds ■ Low on resistance ■ Free from secondary breakdown ■ Low input and output leakage ■ Complementary N- and P-channel devices

文件:27.58 Kbytes 页数:4 Pages

SUTEX

TN0604

N-Channel Enhancement-Mode Vertical DMOS FETs

Features ❏ Low threshold — 1.6V max. ❏ High input impedance ❏ Low input capacitance — 140pF typical ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage ❏ Complementary N- and P-channel devices Applications ❏ Log

文件:44.21 Kbytes 页数:4 Pages

SUTEX

TN0604N3

N-Channel Enhancement-Mode Vertical DMOS FETs

Features ❏ Low threshold — 1.6V max. ❏ High input impedance ❏ Low input capacitance — 140pF typical ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage ❏ Complementary N- and P-channel devices Applications ❏ Log

文件:44.21 Kbytes 页数:4 Pages

SUTEX

TN0604WG

N-Channel Enhancement-Mode Vertical DMOS FETs

Features ❏ Low threshold — 1.6V max. ❏ High input impedance ❏ Low input capacitance — 140pF typical ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage ❏ Complementary N- and P-channel devices Applications ❏ Log

文件:44.21 Kbytes 页数:4 Pages

SUTEX

TN0610

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input i

文件:460.54 Kbytes 页数:5 Pages

SUTEX

TN0610N3-G

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input i

文件:460.54 Kbytes 页数:5 Pages

SUTEX

TN0610N3-G-P003

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input i

文件:460.54 Kbytes 页数:5 Pages

SUTEX

TN0620

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors a

文件:458.44 Kbytes 页数:5 Pages

SUTEX

晶体管资料

  • 型号:

    TN1711

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-NPN

  • 性质:

  • 封装形式:

    直插封装

  • 极限工作电压:

    75V

  • 最大电流允许值:

    0.8A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    3

  • 可代换的型号:

    3DK30C,

  • 最大耗散功率:

    2W

  • 放大倍数:

  • 图片代号:

    A-80

  • vtest:

    75

  • htest:

    999900

  • atest:

    0.8

  • wtest:

    2

技术参数

  • Size(in):

    45

  • Chip Size(μm):

    1143

  • Bond Size(μm):

    848

  • Thickness(μm):

    265

  • Vrwm(μm):

    24

  • It(mA):

    1

  • VC(A)max:

    38.9

  • Ir(μA)max:

    1

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更多TN供应商 更新时间2026-1-27 18:29:00