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TN0702N3

N-Channel Enhancement-Mode Vertical DMOS FETs

Features ❏ Low threshold — 1.0 volt max ❏ On resistance guaranteed at VGS= 2, 3, and 5 volts ❏ High input impedance ❏ Low input capacitance —130pF typical ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage Appl

文件:476.33 Kbytes 页数:4 Pages

SUTEX

TN0C31BH

CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER

MEMORY ORGANIZATION PROGRAM MEMORY: Up to 4 Kbytes of the program memory can reside on-chip (except 80C31BH). In addition the device can address up to 64K of program memory external to the chip. DATA MEMORY: This microcontroller has a 128 x 8 on-chip RAM. In addition it can address up to 64 Kb

文件:229.47 Kbytes 页数:16 Pages

INTEL

英特尔

TN0C51BH

CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER

MEMORY ORGANIZATION PROGRAM MEMORY: Up to 4 Kbytes of the program memory can reside on-chip (except 80C31BH). In addition the device can address up to 64K of program memory external to the chip. DATA MEMORY: This microcontroller has a 128 x 8 on-chip RAM. In addition it can address up to 64 Kb

文件:229.47 Kbytes 页数:16 Pages

INTEL

英特尔

TN-101

MICROWAVE NOISE TUBES & NOISE SOURCES

DESCRIPTION CP Clare’s TD Series of gas discharge microwave noise tubes and TN Series of gas discharge microwave noise sources are the element in a microwave RF system that allows accurate measurements of the noise figure of the receiver or its components. The requirements of a device used for ma

文件:90 Kbytes 页数:5 Pages

CLARE

Clare, Inc.

TN-102

MICROWAVE NOISE TUBES & NOISE SOURCES

DESCRIPTION CP Clare’s TD Series of gas discharge microwave noise tubes and TN Series of gas discharge microwave noise sources are the element in a microwave RF system that allows accurate measurements of the noise figure of the receiver or its components. The requirements of a device used for ma

文件:90 Kbytes 页数:5 Pages

CLARE

Clare, Inc.

TN-103

MICROWAVE NOISE TUBES & NOISE SOURCES

DESCRIPTION CP Clare’s TD Series of gas discharge microwave noise tubes and TN Series of gas discharge microwave noise sources are the element in a microwave RF system that allows accurate measurements of the noise figure of the receiver or its components. The requirements of a device used for ma

文件:90 Kbytes 页数:5 Pages

CLARE

Clare, Inc.

TN-104

MICROWAVE NOISE TUBES & NOISE SOURCES

DESCRIPTION CP Clare’s TD Series of gas discharge microwave noise tubes and TN Series of gas discharge microwave noise sources are the element in a microwave RF system that allows accurate measurements of the noise figure of the receiver or its components. The requirements of a device used for ma

文件:90 Kbytes 页数:5 Pages

CLARE

Clare, Inc.

TN-106

MICROWAVE NOISE TUBES & NOISE SOURCES

DESCRIPTION CP Clare’s TD Series of gas discharge microwave noise tubes and TN Series of gas discharge microwave noise sources are the element in a microwave RF system that allows accurate measurements of the noise figure of the receiver or its components. The requirements of a device used for ma

文件:90 Kbytes 页数:5 Pages

CLARE

Clare, Inc.

TN-107

MICROWAVE NOISE TUBES & NOISE SOURCES

DESCRIPTION CP Clare’s TD Series of gas discharge microwave noise tubes and TN Series of gas discharge microwave noise sources are the element in a microwave RF system that allows accurate measurements of the noise figure of the receiver or its components. The requirements of a device used for ma

文件:90 Kbytes 页数:5 Pages

CLARE

Clare, Inc.

TN-109

MICROWAVE NOISE TUBES & NOISE SOURCES

DESCRIPTION CP Clare’s TD Series of gas discharge microwave noise tubes and TN Series of gas discharge microwave noise sources are the element in a microwave RF system that allows accurate measurements of the noise figure of the receiver or its components. The requirements of a device used for ma

文件:90 Kbytes 页数:5 Pages

CLARE

Clare, Inc.

晶体管资料

  • 型号:

    TN1711

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-NPN

  • 性质:

  • 封装形式:

    直插封装

  • 极限工作电压:

    75V

  • 最大电流允许值:

    0.8A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    3

  • 可代换的型号:

    3DK30C,

  • 最大耗散功率:

    2W

  • 放大倍数:

  • 图片代号:

    A-80

  • vtest:

    75

  • htest:

    999900

  • atest:

    0.8

  • wtest:

    2

技术参数

  • Size(in):

    45

  • Chip Size(μm):

    1143

  • Bond Size(μm):

    848

  • Thickness(μm):

    265

  • Vrwm(μm):

    24

  • It(mA):

    1

  • VC(A)max:

    38.9

  • Ir(μA)max:

    1

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更多TN供应商 更新时间2026-1-28 9:01:00