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型号	下载订购	功能描述	制造商上传企业	LOGO
TN0620	文件：27.71 Kbytes Page：4 Pages	N-Channel Enhancement-Mode Vertical DMOS FETs General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors a 文件：27.71 Kbytes 页数：4 Pages	SUTEX	SUTEX
TN0620N3	文件：27.71 Kbytes Page：4 Pages	N-Channel Enhancement-Mode Vertical DMOS FETs General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors a 文件：27.71 Kbytes 页数：4 Pages	SUTEX	SUTEX
TN0620N3-G	文件：458.44 Kbytes Page：5 Pages	N-Channel Enhancement-Mode Vertical DMOS FET General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors a 文件：458.44 Kbytes 页数：5 Pages	SUTEX	SUTEX
TN0620N5	文件：27.71 Kbytes Page：4 Pages	N-Channel Enhancement-Mode Vertical DMOS FETs General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors a 文件：27.71 Kbytes 页数：4 Pages	SUTEX	SUTEX
TN0635	文件：57.69 Kbytes Page：4 Pages	N-Channel Enhancement-Mode Vertical DMOS FETs Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the 文件：57.69 Kbytes 页数：4 Pages	SUTEX	SUTEX
TN0635N3	文件：57.69 Kbytes Page：4 Pages	N-Channel Enhancement-Mode Vertical DMOS FETs Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the 文件：57.69 Kbytes 页数：4 Pages	SUTEX	SUTEX
TN0635ND	文件：57.69 Kbytes Page：4 Pages	N-Channel Enhancement-Mode Vertical DMOS FETs Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the 文件：57.69 Kbytes 页数：4 Pages	SUTEX	SUTEX
TN0640N3	文件：57.69 Kbytes Page：4 Pages	N-Channel Enhancement-Mode Vertical DMOS FETs Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the 文件：57.69 Kbytes 页数：4 Pages	SUTEX	SUTEX
TN0640ND	文件：57.69 Kbytes Page：4 Pages	N-Channel Enhancement-Mode Vertical DMOS FETs Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the 文件：57.69 Kbytes 页数：4 Pages	SUTEX	SUTEX
TN0702	文件：476.33 Kbytes Page：4 Pages	N-Channel Enhancement-Mode Vertical DMOS FETs Features ❏ Low threshold — 1.0 volt max ❏ On resistance guaranteed at VGS= 2, 3, and 5 volts ❏ High input impedance ❏ Low input capacitance —130pF typical ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage Appl 文件：476.33 Kbytes 页数：4 Pages	SUTEX	SUTEX

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晶体管资料

型号：
TN1711
别名：
三极管、晶体管、晶体三极管
生产厂家：
制作材料：
Si-NPN
性质：
封装形式：
直插封装
极限工作电压：
75V
最大电流允许值：
0.8A
最大工作频率：
<1MHZ或未知
引脚数：
3
可代换的型号：
3DK30C,
最大耗散功率：
2W
放大倍数：
图片代号：
A-80
vtest：
75
htest：
999900
atest：
0.8
wtest：
2

技术参数

Size(in)：
45
Chip Size(μm)：
1143
Bond Size(μm)：
848
Thickness(μm)：
265
Vrwm(μm)：
24
It(mA)：
1
VC(A)max：
38.9
Ir(μA)max：
1

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市威尔健半导体有限公司	TN	ON/安森美	23+	SOT563	50000	全新原装正品现货,支持订货	询价
深圳市中联芯电子有限公司	TP	TI/德州仪器	23+	MSOP10	3050	市场最低原装现货假一罚百可开原型号	询价
深圳市铭威达电子科技有限公司	TR				8860	原装现货	询价
深圳市拓亿芯电子有限公司	TT	ON/安森美	25+	ULLGA6	15000	全新原装现货价格优势	询价
深圳市纳睿斯电子科技有限公司	TZ	LS/电气	25+		30000	原装正品,全系列可订货	询价
香港创芯邦电子有限公司	U1		23+		22	现货或发货一天	询价
现代芯城（深圳）科技有限公司	U2		24+	N/A	46000	一级代理-主营优势-实惠价格-不悔选择	询价
深圳市诚利顺电子科技有限公司	U6	TOSHIBA/东芝	22+	TESQ	30000	十七年VIP会员,诚信经营，一手货源，原装正品可零售！	询价
深圳市天卓伟业电子有限公司	U6	Labjack Corporation			60000	全新、原装	询价
深圳市芯为科技有限公司	U6	Labjack	25+	电联咨询	7800	公司现货,提供拆样技术支持	询价

更多TN供应商更新时间2026-1-27 18:29:00

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