N-Channel Enhancement-Mode Vertical DMOS FETs

Features ❏ Low threshold — 1.6V max. ❏ High input impedance ❏ Low input capacitance — 140pF typical ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage ❏ Complementary N- and P-channel devices Applications ❏ Log

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SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

文件：33.28 Kbytes 页数：4 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

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SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology\n\nThese low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the □ Low threshold — 1.6V max.\n□ High input impedance\n□ Low input capacitance — 140pF typical\n□ Fast switching speeds\n□ Low on resistance\n□ Free from secondary breakdown\n□ Low input and output leakage\n□ Complementary N- and P-channel devicesApplications\n□ Logic level interfaces – ideal for TTL ;

Microchip

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