TIP146

10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

TIP140,TIP141,TIP142-->NPN TIP145,TIP146,TIP147--->PNP ...designedforgeneral–purposeamplifierandlowfrequencyswitchingapplications. •HighDCCurrentGain—MinhFE=1000@IC=5A,VCE=4V •Collector–EmitterSustainingVoltage—@30mA VCEO(sus)=60Vdc(Min)—TIP140,

TIP146

PNP SILICON POWER DARLINGTONS

●DesignedforComplementaryUsewithTIP140,TIP141andTIP142 ●125Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●MinimumhFEof1000at4V,5A

TIP146

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

DarlingtonComplementarySiliconPowerTransistors Designedforgeneral−purposeamplifierandlowfrequencyswitchingapplications. Features •HighDCCurrentGain− MinhFE=1000@IC =5.0A,VCE=4V •Collector−EmitterSustainingVoltage−@30mA

TIP146

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION TheTIP140,TIP141andTIP142aresiliconepitaxial-baseNPNpowertransistorsinmonolithicDarlingtonconfigurationandaremountedinTO-218plasticpackage.Theyareintentedforuseinpowerlinearandswitchingapplications. ThecomplementaryPNPtypesareTIP145,TIP146andTI

TIP146

Monolithic Construction With Built In Base- Emitter Shunt Resistors

Features •MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=-4V,IC=-5A(Min.) •IndustrialUse •ComplementtoTIP140/141/142

TIP146

PNP Epitaxial Silicon Darlington Transistor

Features •MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=-4V,IC=-5A(Min.) •IndustrialUse •ComplementtoTIP140/141/142

TIP146

Darlington Complementary Silicon Power Transistors

TIP146

NPN SILICON DARLINGTONS, SILICON POWER TRANSISTORS

TIP146

Package：TO-218-3；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 80V 10A TO218

TIP146

Package：TO-218-3；包装：剪切带（CT）带盒（TB） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP DARL 80V 10A TO218