NPN High-Power Transistors Designed for general?뭦urpose power amplifier and switching

Designed for general−purpose power amplifier and switching applications. Features • ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V • Epoxy Meets UL 94 V−0 @ 0.125 in • These are Pb−Free Devices*

文件：109.97 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

COMPLEMENTARY SILICON POWER TRANSISTORS

Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • 10 A Collector Current • Low Leakage Current — ICEO = 0.7 mA @ 60 V • Excellent dc Gain — hFE = 40 Typ @ 3.0 A • High Current Gain Bandwidth Product — hfe = 3.0 min @ IC = 0.5

文件：102.85 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

HIGH POWER TRANSISTORS

HIGH POWER TRANSISTORS TO- 3PN Non Isolated Plastic Package For General Purpose Power Amplifier and Switching Applications.

文件：337.99 Kbytes 页数：4 Pages

CDIL

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP33 and TIP34 series devices are complementary silicon high power transistors manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications.

文件：445.43 Kbytes 页数：2 Pages

Central

POWER TRANSISTORS(10A,40-100V,80W)

10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 40 - 100 VOLTS 80WATTS TIP33,TIP33A,TIP33B,TIP33C ---> NPN TIP34,TIP34A,TIP34B,TIP34C ---> PNP

文件：144.36 Kbytes 页数：3 Pages

MOSPEC

统懋

COMPLEMENTARY SILICON POWER TRANSISTORS

Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • 10 A Collector Current • Low Leakage Current — ICEO = 0.7 mA @ 60 V • Excellent dc Gain — hFE = 40 Typ @ 3.0 A • High Current Gain Bandwidth Product — hfe = 3.0 min @ IC = 0.5

文件：105.51 Kbytes 页数：4 Pages

Motorola

摩托罗拉

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type TIP34/34A/34B/34C • DC current gain hFE=40(Min)@IC=1.0A APPLICATIONS • Designed for use in general purpose power amplifier and switching applications.

文件：134.55 Kbytes 页数：3 Pages

ISC

无锡固电

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the TIP34 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available

文件：78.32 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the TIP34 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available

文件：91.05 Kbytes 页数：6 Pages

POINN

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type TIP34/34A/34B/34C • DC current gain hFE=40(Min)@IC=1.0A APPLICATIONS • Designed for use in general purpose power amplifier and switching applications.

文件：137.66 Kbytes 页数：3 Pages

SAVANTIC