Silicon NPN Darlington Power Transistor

文件：285.31 Kbytes 页数：2 Pages

MCC

DARLINGTON TRANSISTOR (NPN)

文件：228.04 Kbytes 页数：2 Pages

KOOCHIN

灏展电子

TIP112: NPN Epitaxial Silicon Darlington Transistor

TIP112 具有内置基极-发射极分流电阻的单片架构\n TIP115/116/117的补充器件\n 高DC电流增益：hFE= 1000 @ VCE= 4 V，IC= 1 A（最小值）\n 低集电极-发射极饱和电压\n 工业用途;

ONSEMI

安森美半导体

中等功率双极型晶体管

MCC

美微科

达林顿管

JSCJ

长晶科技

Package：TO-220-3；包装：管件 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN DARL 100V 2A TO220-3

ONSEMI

安森美半导体

Package：TO-220-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN DARL 100V 2A TO220

STMICROELECTRONICS

意法半导体

Silicon NPN Darlington Power Transistor

Features • Halogen free available upon request by adding suffix -HF • The complementary PNP types are the TIP115/116/117 respectively • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Mois

文件：149.35 Kbytes 页数：2 Pages

MCC

EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)

MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES • High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A. • Low Collector-Emitter Saturation Voltage. • Complementary to TIP117F.

文件：41.37 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

PLASTIC POWER TRANSISTORS

Intended for use in Medium Power Linear and Switching Applications

文件：271.16 Kbytes 页数：3 Pages

CDIL