| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
TIP112 | Monolithic Construction With Built In Base- Emitter Shunt Resistors Monolithic Construction With Built In Base-Emitter Shunt Resistors • Complementary to TIP115/116/117 • High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) • Low Collector-Emitter Saturation Voltage • Industrial Use 文件:49.25 Kbytes 页数:4 Pages | Fairchild 仙童半导体 | Fairchild | |
TIP112 | Plastic Medium-Power Complementary Silicon Transistors Plastic Medium-Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 1.0 Adc • Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 60 Vdc (Min) 文件:269.51 Kbytes 页数:6 Pages | ONSEMI 安森美半导体 | ONSEMI | |
TIP112 | PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS
文件:153.15 Kbytes 页数:3 Pages | boca 博卡 | boca | |
TIP112 | DARLINGTON TRANSISTOR (NPN) TO-220-3L Plastic-Encapsulate Transistors FEATURES ● High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) ● Low Collector-Emitter Saturation Voltage ● Industrial Use 文件:286.69 Kbytes 页数:2 Pages | JIANGSU 长电科技 | JIANGSU | |
TIP112 | PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS
文件:99.23 Kbytes 页数:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | |
TIP112 | NPN SILICON POWER DARLINGTONS NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP115, TIP116 and TIP117 ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 500 at 4 V, 2 A 文件:101.68 Kbytes 页数:6 Pages | POINN | POINN | |
TIP112 | Silicon NPN Darlington Power Transistors DESCRIPTION • With TO-220C package • DARLINGTON • High DC current gain • Low collector saturation voltage • Complement to type TIP115/116/117 APPLICATIONS • For industrial use 文件:122.78 Kbytes 页数:4 Pages | SAVANTIC | SAVANTIC | |
TIP112 | Silicon NPN transistor in a TO-220 Plastic Package. Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features Complement to TIP117. Applications Medium power linear switching applications. 文件:1.25135 Mbytes 页数:6 Pages | FOSHAN 蓝箭电子 | FOSHAN | |
TIP112 | DARLINGTON TRANSISTOR (NPN) FEATURES ● High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) ● Low Collector-Emitter Saturation Voltage ● Industrial Use 文件:149.42 Kbytes 页数:2 Pages | FS | FS | |
TIP112 | PLASTIC POWER TRANSISTORS PLASTIC POWER TRANSISTORS Intended for use in Medium Power Linear and Switching Applications TO-220 Plastic Package 文件:72.48 Kbytes 页数:2 Pages | TEL | TEL |
产品属性
- 产品编号:
TIP112
- 制造商:
onsemi
- 类别:
分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个
- 包装:
管件
- 晶体管类型:
NPN - 达林顿
- 不同 Ib、Ic 时 Vce 饱和压降(最大值):
2.5V @ 8mA,2A
- 电流 - 集电极截止(最大值):
2mA
- 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):
1000 @ 1A,4V
- 工作温度:
150°C(TJ)
- 安装类型:
通孔
- 封装/外壳:
TO-220-3
- 供应商器件封装:
TO-220-3
- 描述:
TRANS NPN DARL 100V 2A TO220-3
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法半导体) |
24+ |
TO-220 |
942 |
原厂订货渠道,支持BOM配单一站式服务 |
询价 | ||
ST/意法 |
24+ |
TO-220 |
2000 |
全新原装深圳仓库现货有单必成 |
询价 | ||
ST/意法 |
21+19+ |
TO-220 |
8279 |
只做原装正品 |
询价 | ||
ST/意法 |
25+ |
TO-220 |
45000 |
ST/意法全新现货TIP112即刻询购立享优惠#长期有排单订 |
询价 | ||
SMG |
06+ |
原厂原装 |
13451 |
只做全新原装真实现货供应 |
询价 | ||
STM |
24+/25+ |
TO-220AB |
400 |
原装正品现货库存价优 |
询价 | ||
24+ |
TO-220 |
10000 |
全新 |
询价 | |||
ST/进口原 |
17+ |
TO-220 |
6200 |
询价 | |||
ON |
11+ |
TO-220 |
8000 |
全新原装,绝对正品现货供应 |
询价 | ||
ST |
16+ |
TO-220 |
10000 |
全新原装现货 |
询价 |
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