丝印：T09；Package：PowerDI3333-8；100V N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications • Synchronous Rectifier • Backlighting • Power Management Functions • DC-DC Con

文件：481.66 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：T09；Package：PowerDI3333-8；100V N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications • Synchronous Rectifier • Backlighting • Power Management Functions • DC-DC Con

文件：481.66 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：T09；Package：SOT-26；General purpose amplification (-30V, -1A)

文件：107.11 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：T09；Package：TUMT6；General purpose amplification (−30V, −1A)

文件：113.37 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：T092；Package：SO；DUAL JFET-INPUT OPERATIONAL AMPLIFIER

Wide Range of Supply Voltages; Single Supply . . . 3 V to 36 V, or Dual Supplies Class AB Output Stage High-Impedance N-Channel-JFET Input Stage . . . 1012 Ω Typ Internal Frequency Compensation Short-Circuit Protection Input Common Mode Includes VCC− Low Input Offset Current . . . 50 pA L

文件：308.66 Kbytes 页数：11 Pages

TI

德州仪器

丝印：T092；Package：SO；DUAL JFET-INPUT OPERATIONAL AMPLIFIER

Wide Range of Supply Voltages; Single Supply . . . 3 V to 36 V, or Dual Supplies Class AB Output Stage High-Impedance N-Channel-JFET Input Stage . . . 1012 Ω Typ Internal Frequency Compensation Short-Circuit Protection Input Common Mode Includes VCC− Low Input Offset Current . . . 50 pA L

文件：308.66 Kbytes 页数：11 Pages

TI

德州仪器

丝印：T095N65S3H；Package：TO-247-L4；MOSFET - Power, N-Channel, SUPERFET III, FAST

文件：270.69 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：T095N65S3H；Package：TO-247；MOSFET ??Power, N-Channel, SUPERFET III, FAST

文件：278.47 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：T099N60S5；Package：TO-247；MOSFET - Power, Single N-Channel, SUPERFET V, Easy Drive, TO247-3L 600 V, 99 m, 33 A

文件：267 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

丝印：T095N65S3H；Package：TO-220-3LD；MOSFET - Power, N?륝hannel, SUPERFET III, FAST

文件：234.38 Kbytes 页数：10 Pages

ONSEMI

安森美半导体