丝印：T095N65S3H；Package：TO-247；MOSFET ??Power, N-Channel, SUPERFET III, FAST

文件：278.47 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：NTHL095N65S3HF；Package：TO-247；MOSFET ??Power, N?륝hannel, SUPERFET III, FRFET 650 V, 36 A, 95 m

文件：452.89 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 30 A, 95 mΩ, TO-247

SUPERFET III MOSFET is ON Semiconductor’s brand-new high\nvoltage super-junction (SJ) MOSFET family that is utilizing charge\nbalance technology for outstanding low on-resistance and lower gate\ncharge performance. This advanced technology is tailored to minimize\nconduction loss, provides superior • 700 V @ TJ = 150°C\n• Higher system reliability at low temperature operation\n• Ultra Low Gate Charge (Typ. Qg = 58 nC)\n• Low switching loss\n• Low Effective Output Capacitance (Typ. Coss(eff.) = 398 pF)\n• Low switching loss\n• Fast switching performance with robust body diode\n• Low switching l;

ONSEMI

安森美半导体

功率 MOSFET，N 沟道，SUPERFET® III，FRFET®，650 V，36 A，95 mΩ，TO-247

SUPERFET III MOSFET is ON Semiconductor’s brand−new high\nvoltage super−junction (SJ) MOSFET family that is utilizing charge\nbalance technology for outstanding low on−resistance and lower gate\ncharge performance. This advanced technology is tailored to minimize\nconduction loss, provide superior s • 700 V @ TJ = 150 oC\n• Higher system reliability at low temperature operation\n• Ultra Low Gate Charge (Typ. Qg = 66 nC)\n• Lower switching loss\n• Low Effective Output Capacitance (Typ. Coss(eff.) = 569 pF)\n• Lower switching loss\n• Excellent body diode performance (low Qrr, robust body diode)\n;

ONSEMI

安森美半导体