丝印：SW055R06E7T；Package：TO-220；N-channel Enhanced mode TO-220 MOSFET

Features ⚫ High ruggedness ⚫ Low RDS(ON) (Typ 5.2mΩ)@VGS=10V ⚫ Low Gate Charge (Typ 94nC) ⚫ Improved dv/dt Capability ⚫ 100 Avalanche Tested ⚫ Application:Synchronous Rectification, Li Battery Protect Board, Inverter

文件：583.56 Kbytes 页数：6 Pages

SEMIPOWER

芯派科技

N-channel Enhanced mode TO-220 MOSFET

Features ⚫ High ruggedness ⚫ Low RDS(ON) (Typ 5.2mΩ)@VGS=10V ⚫ Low Gate Charge (Typ 94nC) ⚫ Improved dv/dt Capability ⚫ 100 Avalanche Tested ⚫ Application:Synchronous Rectification, Li Battery Protect Board, Inverter

文件：583.56 Kbytes 页数：6 Pages

SEMIPOWER

芯派科技