丝印：SW7N65DA；Package：TO-252；N-channel Enhanced mode TO-251N/TO-262N/TO-252 MOSFET

Features  High ruggedness  Low RDS(ON) (Typ 1.4Ω)@VGS=10V  Low Gate Charge (Typ 25nC)  Improved dv/dt Capability  100 Avalanche Tested  Application: LED , Charge, PC Power

文件：923.82 Kbytes 页数：7 Pages

SEMIPOWER

芯派科技

丝印：SW7N65DA；Package：TO-262N；N-channel Enhanced mode TO-251N/TO-262N/TO-252 MOSFET

Features  High ruggedness  Low RDS(ON) (Typ 1.4Ω)@VGS=10V  Low Gate Charge (Typ 25nC)  Improved dv/dt Capability  100 Avalanche Tested  Application: LED , Charge, PC Power

文件：923.82 Kbytes 页数：7 Pages

SEMIPOWER

芯派科技

丝印：SW7N65DA；Package：TO-251N；N-channel Enhanced mode TO-251N/TO-262N/TO-252 MOSFET

Features  High ruggedness  Low RDS(ON) (Typ 1.4Ω)@VGS=10V  Low Gate Charge (Typ 25nC)  Improved dv/dt Capability  100 Avalanche Tested  Application: LED , Charge, PC Power

文件：923.82 Kbytes 页数：7 Pages

SEMIPOWER

芯派科技

N-channel Enhanced mode TO-251N/TO-262N/TO-252 MOSFET

Features  High ruggedness  Low RDS(ON) (Typ 1.4Ω)@VGS=10V  Low Gate Charge (Typ 25nC)  Improved dv/dt Capability  100 Avalanche Tested  Application: LED , Charge, PC Power

文件：923.82 Kbytes 页数：7 Pages

SEMIPOWER

芯派科技