丝印：SW4N70L；Package：TO-252；N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET

Features  High ruggedness  Low RDS(ON) (Typ 0.8Ω)@VGS=10V  Low Gate Charge (Typ 18nC)  Improved dv/dt Capability  100 Avalanche Tested  Application: LED,Charge, Adaptor General Description This power MOSFET is produced with advanced super junction technology of SAMWIN. This techno

文件：1.05236 Mbytes 页数：7 Pages

SEMIPOWER

芯派科技

丝印：SW4N70L；Package：TO-251N；N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET

Features  High ruggedness  Low RDS(ON) (Typ 0.8Ω)@VGS=10V  Low Gate Charge (Typ 18nC)  Improved dv/dt Capability  100 Avalanche Tested  Application: LED,Charge, Adaptor General Description This power MOSFET is produced with advanced super junction technology of SAMWIN. This techno

文件：1.05236 Mbytes 页数：7 Pages

SEMIPOWER

芯派科技

N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET

Features  High ruggedness  Low RDS(ON) (Typ 0.8Ω)@VGS=10V  Low Gate Charge (Typ 18nC)  Improved dv/dt Capability  100 Avalanche Tested  Application: LED,Charge, Adaptor General Description This power MOSFET is produced with advanced super junction technology of SAMWIN. This techno

文件：1.05236 Mbytes 页数：7 Pages

SEMIPOWER

芯派科技