丝印：SW058R72E7T；Package：TO-220；N-channel Enhanced mode TO-220 MOSFET

Features  High ruggedness  Low RDS(ON)(Typ 6.3mΩ)@VGS=10V  Low Gate Charge (Typ107nC)  Improved dv/dt Capability  100 Avalanche Tested  Application:Synchronous Rectification,Li Battery Protect Board, Inverter

文件：829.05 Kbytes 页数：6 Pages

SEMIPOWER

芯派科技

N-channel Enhanced mode TO-220 MOSFET

Features  High ruggedness  Low RDS(ON)(Typ 6.3mΩ)@VGS=10V  Low Gate Charge (Typ107nC)  Improved dv/dt Capability  100 Avalanche Tested  Application:Synchronous Rectification,Li Battery Protect Board, Inverter

文件：829.05 Kbytes 页数：6 Pages

SEMIPOWER

芯派科技