丝印：SW065R68E7T；Package：TO-252；N-channel Enhanced mode TO-252 MOSFET

Features  High ruggedness  Low RDS(ON) (Typ 6.3mΩ)@VGS=10V  Low Gate Charge (Typ 75nC)  Improved dv/dt Capability  100 Avalanche Tested  Application:Synchronous Rectification, Li Battery Protect Board, Inverter General Description This power MOSFET is produced with advanced technol

文件：689.14 Kbytes 页数：6 Pages

SEMIPOWER

芯派科技

N-channel Enhanced mode TO-252 MOSFET

Features  High ruggedness  Low RDS(ON) (Typ 6.3mΩ)@VGS=10V  Low Gate Charge (Typ 75nC)  Improved dv/dt Capability  100 Avalanche Tested  Application:Synchronous Rectification, Li Battery Protect Board, Inverter General Description This power MOSFET is produced with advanced technol

文件：689.14 Kbytes 页数：6 Pages

SEMIPOWER

芯派科技