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SWD065R68E7T

Marking:SW065R68E7T;Package:TO-252;N-channel Enhanced mode TO-252 MOSFET

Features Highruggedness LowRDS(ON)(Typ6.3mΩ)@VGS=10V LowGateCharge(Typ75nC) Improveddv/dtCapability 100AvalancheTested Application:SynchronousRectification,LiBatteryProtectBoard,Inverter GeneralDescription ThispowerMOSFETisproducedwithadvancedtechnol

SEMIPOWERXian Semipower Electronic Technology Co., Ltd.

芯派科技芯派科技股份有限公司

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