SWD065R68E7T芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
SWD065R68E7T	文件：689.14 Kbytes Page：6 Pages	丝印：SW065R68E7T；Package：TO-252；N-channel Enhanced mode TO-252 MOSFET Features  High ruggedness  Low RDS(ON) (Typ 6.3mΩ)@VGS=10V  Low Gate Charge (Typ 75nC)  Improved dv/dt Capability  100 Avalanche Tested  Application:Synchronous Rectification, Li Battery Protect Board, Inverter General Description This power MOSFET is produced with advanced technol 文件：689.14 Kbytes 页数：6 Pages	SEMIPOWER 芯派科技	SEMIPOWER
SW065R68E7T	文件：689.14 Kbytes Page：6 Pages	N-channel Enhanced mode TO-252 MOSFET Features  High ruggedness  Low RDS(ON) (Typ 6.3mΩ)@VGS=10V  Low Gate Charge (Typ 75nC)  Improved dv/dt Capability  100 Avalanche Tested  Application:Synchronous Rectification, Li Battery Protect Board, Inverter General Description This power MOSFET is produced with advanced technol 文件：689.14 Kbytes 页数：6 Pages	SEMIPOWER 芯派科技	SEMIPOWER

更多SW065R68E7T供应商更新时间2025-11-4 11:06:00