丝印：SW22N65D；Package：TO-247；N-channel Enhanced mode TO-247 MOSFETS

Features  High ruggedness  Low RDS(ON) (Typ 0.22Ω)@VGS=10V  Low Gate Charge (Typ 123nC)  Improved dv/dt Capability  100 Avalanche Tested  Application: LED , Charger, PC Power

文件：649.95 Kbytes 页数：6 Pages

SEMIPOWER

芯派科技

N-channel Enhanced mode TO-247 MOSFETS

Features  High ruggedness  Low RDS(ON) (Typ 0.22Ω)@VGS=10V  Low Gate Charge (Typ 123nC)  Improved dv/dt Capability  100 Avalanche Tested  Application: LED , Charger, PC Power

文件：649.95 Kbytes 页数：6 Pages

SEMIPOWER

芯派科技

N-channel Enhanced mode TO-247 MOSFET

文件：757.04 Kbytes 页数：6 Pages

SEMIPOWER

芯派科技