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SWB068R08ET

Marking:SW068R08ET;Package:TO-263;N-channel Enhanced mode TO-220/TO-263 MOSFET

Features  Highruggedness  LowRDS(ON)(Typ7.1mΩ)@VGS=10V  LowGateCharge(Typ59nC)  Improveddv/dtCapability  100AvalancheTested  Application:SynchronousRectification,LiBatteryProtectBoard,Inverter GeneralDescription ThispowerMOSFETisproducedwithadvancedtec

SEMIPOWERXian Semipower Electronic Technology Co., Ltd.

芯派科技芯派科技股份有限公司

SWP068R08ET

Marking:SW068R08ET;Package:TO-220;N-channel Enhanced mode TO-220/TO-263 MOSFET

Features  Highruggedness  LowRDS(ON)(Typ7.1mΩ)@VGS=10V  LowGateCharge(Typ59nC)  Improveddv/dtCapability  100AvalancheTested  Application:SynchronousRectification,LiBatteryProtectBoard,Inverter GeneralDescription ThispowerMOSFETisproducedwithadvancedtec

SEMIPOWERXian Semipower Electronic Technology Co., Ltd.

芯派科技芯派科技股份有限公司

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