SWB068R08ET中文资料芯派科技数据手册PDF规格书

厂商型号	SWB068R08ET
功能描述	N-channel Enhanced mode TO-220/TO-263 MOSFET
丝印标识	SW068R08ET
封装外壳	TO-263
文件大小	859.71 Kbytes
页面数量	6 页
生产厂商	Xian Semipower Electronic Technology Co., Ltd.
企业简称	SEMIPOWER【芯派科技】
中文名称	芯派科技股份有限公司官网
原厂标识
数据手册	下载地址一下载地址二
更新时间	2025-6-5 15:30:00
人工找货	SWB068R08ET价格和库存，欢迎联系客服免费人工找货

Features



High ruggedness



Low RDS(ON)(Typ 7.1mΩ)@VGS=10V



Low Gate Charge (Typ59nC)

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Improved dv/dt Capability



100 Avalanche Tested



Application: Synchronous Rectification,Li Battery Protect Board, Inverter

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.