丝印：SW068R08ET；Package：TO-263；N-channel Enhanced mode TO-220/TO-263 MOSFET

Features  High ruggedness  Low RDS(ON)(Typ 7.1mΩ)@VGS=10V  Low Gate Charge (Typ59nC)  Improved dv/dt Capability  100 Avalanche Tested  Application: Synchronous Rectification,Li Battery Protect Board, Inverter General Description This power MOSFET is produced with advanced tec

文件：859.71 Kbytes 页数：6 Pages

SEMIPOWER

芯派科技

N-channel Enhanced mode TO-220/TO-263 MOSFET

Features  High ruggedness  Low RDS(ON)(Typ 7.1mΩ)@VGS=10V  Low Gate Charge (Typ59nC)  Improved dv/dt Capability  100 Avalanche Tested  Application: Synchronous Rectification,Li Battery Protect Board, Inverter General Description This power MOSFET is produced with advanced tec

文件：859.71 Kbytes 页数：6 Pages

SEMIPOWER

芯派科技

N-channel Enhanced mode TO-220/TO-263 MOSFET

Features  High ruggedness  Low RDS(ON)(Typ 7.1mΩ)@VGS=10V  Low Gate Charge (Typ59nC)  Improved dv/dt Capability  100 Avalanche Tested  Application: Synchronous Rectification,Li Battery Protect Board, Inverter General Description This power MOSFET is produced with advanced tec

文件：859.71 Kbytes 页数：6 Pages

SEMIPOWER

芯派科技

sop8

MACOM

上传：深圳市向鸿伟业电子有限公司

SOT23-3

SWF

上传：深圳市泓利达微科技有限公司