SWP055R68E7T芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
SWB055R68E7T	文件：822.3 Kbytes Page：6 Pages	丝印：SW055R68E7T；Package：TO-263；N-channel Enhanced mode TO-220/TO-263 MOSFET Features  High ruggedness  Low RDS(ON)(Typ 5.6mΩ)@VGS=10V  Low Gate Charge (Typ94nC)  Improved dv/dt Capability  100 Avalanche Tested  Application:Synchronous Rectification,Li Battery Protect Board, Inverter 文件：822.3 Kbytes 页数：6 Pages	SEMIPOWER 芯派科技	SEMIPOWER
SWP055R68E7T	文件：822.3 Kbytes Page：6 Pages	丝印：SW055R68E7T；Package：TO-220；N-channel Enhanced mode TO-220/TO-263 MOSFET Features  High ruggedness  Low RDS(ON)(Typ 5.6mΩ)@VGS=10V  Low Gate Charge (Typ94nC)  Improved dv/dt Capability  100 Avalanche Tested  Application:Synchronous Rectification,Li Battery Protect Board, Inverter 文件：822.3 Kbytes 页数：6 Pages	SEMIPOWER 芯派科技	SEMIPOWER
SW055R68E7T	文件：822.3 Kbytes Page：6 Pages	N-channel Enhanced mode TO-220/TO-263 MOSFET Features  High ruggedness  Low RDS(ON)(Typ 5.6mΩ)@VGS=10V  Low Gate Charge (Typ94nC)  Improved dv/dt Capability  100 Avalanche Tested  Application:Synchronous Rectification,Li Battery Protect Board, Inverter 文件：822.3 Kbytes 页数：6 Pages	SEMIPOWER 芯派科技	SEMIPOWER

更多SW055R68E7T供应商更新时间2025-8-12 9:07:00