SWP055R68E7T

Marking：SW055R68E7T；Package：TO-220；N-channel Enhanced mode TO-220/TO-263 MOSFET

Features  Highruggedness  LowRDS(ON)(Typ5.6mΩ)@VGS=10V  LowGateCharge(Typ94nC)  Improveddv/dtCapability  100AvalancheTested  Application:SynchronousRectification,LiBatteryProtectBoard,Inverter

SWP058R72E7T

Marking：SW058R72E7T；Package：TO-220；N-channel Enhanced mode TO-220 MOSFET

Features  Highruggedness  LowRDS(ON)(Typ6.3mΩ)@VGS=10V  LowGateCharge(Typ107nC)  Improveddv/dtCapability  100AvalancheTested  Application:SynchronousRectification,LiBatteryProtectBoard,Inverter

SWP068R08ET

Marking：SW068R08ET；Package：TO-220；N-channel Enhanced mode TO-220/TO-263 MOSFET

Features  Highruggedness  LowRDS(ON)(Typ7.1mΩ)@VGS=10V  LowGateCharge(Typ59nC)  Improveddv/dtCapability  100AvalancheTested  Application:SynchronousRectification,LiBatteryProtectBoard,Inverter GeneralDescription ThispowerMOSFETisproducedwithadvancedtec

SWT22N65D

Marking：SW22N65D；Package：TO-247；N-channel Enhanced mode TO-247 MOSFETS

Features  Highruggedness  LowRDS(ON)(Typ0.22Ω)@VGS=10V  LowGateCharge(Typ123nC)  Improveddv/dtCapability  100AvalancheTested  Application:LED,Charger,PCPower

SWT88N60K2

Marking：SW88N60K2；Package：TO-247；N-channel Enhanced mode TO-247 MOSFET

Features ⚫Highruggedness ⚫LowRDS(ON)(Typ24mΩ)@VGS=10V ⚫LowGateCharge(Typ188nC) ⚫Improveddv/dtCapability ⚫100AvalancheTested ⚫Application:Solar/PVinverter、Servicer、 Telecom、PCpower、UPS、EV-charger GeneralDescription ThispowerMOSFETisproducedwithsuperjunctiona

BSS138W

Marking：SWs；Package：PG-SOT-323；SIPMOS Small-Signal-Transistor

BSS306N

Marking：SWs；Package：SOT23；OptiMOS 2 Small-Signal-Transistor