STS3116E

Super high dense cell design for low RDS(ON).

STU412STO-252Single-N STU420STO-252Single-N STU442STO-252Single-N STU410STO-252Single-N STU456ATO-252Single-N STU456STO-252Single-N STU448STO-252Single-N STU466STO-252Single-N STU446STO-252SingleN STU432LTO-252SingleN STU438ATO-252Single-N STU458STO-252SingleN

STS3116E

N-Channel 30-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverter

STS32

3th Generation, High-Reliability, Certified Digital Temperature Sensor

Features •Accuracy±0.4°C •VDD=2.15V…5.5V •Lowdrift,

STS321080B100

I-Line Low Capacitance Bi-directional TVS Diode

Features +350Wpeakpulsepower(8/205) +Lowoperating:8V «Ultralowcapacitance:1.0pFtypical| +Ultralowleakage:nAleel +Lowclampingvoltage +Protectsonepowerlineordataline +Complieswithfollowingstandards: «—IEC61000-4-2(ESD)immunitytest| Airdischarge:£30

STS32-DIS

3th Generation, High-Reliability, Certified Digital Temperature Sensor

Features •Accuracy±0.4°C •VDD=2.15V…5.5V •Lowdrift,

STS32-DIS-10KS

3th Generation, High-Reliability, Certified Digital Temperature Sensor

Features •Accuracy±0.4°C •VDD=2.15V…5.5V •Lowdrift,

STS32-DIS-2.5KS

3th Generation, High-Reliability, Certified Digital Temperature Sensor

Features •Accuracy±0.4°C •VDD=2.15V…5.5V •Lowdrift,

STS33-DIS

3th Generation, High-Reliability, Certified Digital Temperature Sensor

Features •Accuracy±0.4°C •VDD=2.15V…5.5V •Lowdrift,

STS33-DIS-10KS

3th Generation, High-Reliability, Certified Digital Temperature Sensor

Features •Accuracy±0.4°C •VDD=2.15V…5.5V •Lowdrift,

STS33-DIS-2.5KS

3th Generation, High-Reliability, Certified Digital Temperature Sensor

Features •Accuracy±0.4°C •VDD=2.15V…5.5V •Lowdrift,