N-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-23 package.

文件：646.68 Kbytes 页数：7 Pages

SAMHOP

三合微科

N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters • Load Switch for Portable Applications

文件：1.0517 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Mosfets

Samhop

三合微科

S uper high dense cell design for low R DS (ON).

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● Surface Mount Package. ● ESD Protected.

文件：145.13 Kbytes 页数：7 Pages

SAMHOP

三合微科

S uper high dense cell design for low R DS (ON).

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● Surface Mount Package. ● ESD Protected.

文件：141.87 Kbytes 页数：7 Pages

SAMHOP

三合微科

Mosfets

Samhop

三合微科

Mosfets

Samhop

三合微科