isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 85A@ TC=25℃ ·Drain Source Voltage -VDSS=68V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 9.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.99 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：80N70F4；Package：TO-220；N-channel 68 V, 8.2 m廓 typ., 85 A STripFET??DeepGATE?? Power MOSFET in TO-220 package

文件：659.31 Kbytes 页数：12 Pages

STMICROELECTRONICS

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N-Channel MOSFET uses advanced trench technology

文件：1.75554 Mbytes 页数：5 Pages

DOINGTER

杜因特

N-channel 68 V, 8.2 mOhm typ., 85 A STripFET DeepGATE Power MOSFET in TO-220 package

This device is an N-channel Power MOSFET developed using ST’s STripFET™ DeepGATE™ technology. The device has a new gate structure and is specially designed to minimize on-state resistance to provide superior switching performance. N-channel enhancement mode\n100% avalanched rated\nLow gate charge\nVery low on-resistance;

ST

意法半导体