Isc N-Channel MOSFET Transistor

• FEATURES • Typical RDS(on)=0.005Ω • Excellent switching performance • Easy to drive • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Solenoid and relay drivers • DC-DC converters • Automotive environment

文件：318.52 Kbytes 页数：2 Pages

ISC

无锡固电

N - CHANNEL 55V - 0.005ohm - 80A TO-220/TO-220FP STripFET POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

文件：48.86 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

N-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAK STripFET II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

文件：533.29 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

N-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAK STripFET II Power MOSFET

文件：449.27 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-Channel 60 V (D-S) MOSFET

文件：998.2 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

N沟道55 V、5 mOhm、80 A TO-220 STripFET(TM) II功率MOSFET

This Power MOSFET is the latest development of STMicroelectronis unique \\\"Single Feature Size™\\\" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable man • Exceptional dv/dt capability \n• Application oriented characterization \n• 100% avalanche tested \n• Switching application;

ST

意法半导体

N-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAK STripFET II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

文件：533.29 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL 55V - 0.005ohm - 80A TO-220/TO-220FP STripFET POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

文件：48.86 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=60A@ TC=25℃ ·Drain Source Voltage -VDSS=55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.38 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAK STripFET II Power MOSFET

文件：449.27 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体