| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-CHANNEL 700V - 1.1ohm - 6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested 文件:529.5 Kbytes 页数:13 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
N-CHANNEL 700V - 1.1ohm - 6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested 文件:529.5 Kbytes 页数:13 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
N-CHANNEL 700V - 1.1ohm - 6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested 文件:529.5 Kbytes 页数:13 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
N-CHANNEL 700V - 1.1ohm - 6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested 文件:529.5 Kbytes 页数:13 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
N-CHANNEL 700V - 1.1ohm - 6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested 文件:529.5 Kbytes 页数:13 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
N-CHANNEL 700V - 1.1ohm - 6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested 文件:529.5 Kbytes 页数:13 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS |
详细参数
- 型号:
STP7NC70
- 制造商:
STMICROELECTRONICS
- 制造商全称:
STMicroelectronics
- 功能描述:
N-CHANNEL 700V - 1.1ohm - 6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
24+ |
TO-220F |
15000 |
原装现货热卖 |
询价 | ||
ST02 |
24+ |
TO-220 |
2000 |
询价 | |||
ST/进口原 |
17+ |
TO-220F |
6200 |
询价 | |||
ST |
23+ |
TO-220F |
10000 |
专做原装正品,假一罚百! |
询价 | ||
ST |
20+ |
TO-220F |
38560 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
ST |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ST/意法 |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ST |
17+ |
TO-220F |
500 |
进口原装现货假一赔万力挺实单 |
询价 | ||
ST/意法 |
22+ |
TO-220F |
20000 |
原装现货,实单支持 |
询价 | ||
ST/意法 |
24+ |
NA/ |
3829 |
原厂直销,现货供应,账期支持! |
询价 |
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