丝印：P75N15；Package：TO-220；N-CHANNEL 150V - 0.02Ω - 75A TO-220/D²PAK/TO-247 LOW GATE CHARGE STripFET™ MOSFET

TYPICAL RDS(on) = 20 mΩ
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING REPEATIBILITY
EXCELLENT FIGURE OF MERIT (RDS*Qg)
100 AVALANCHE TESTED DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specificall

文件：237 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 150V - 0.02Ω - 75A TO-220/D²PAK/TO-247 LOW GATE CHARGE STripFET™ MOSFET

TYPICAL RDS(on) = 20 mΩ
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING REPEATIBILITY
EXCELLENT FIGURE OF MERIT (RDS*Qg)
100 AVALANCHE TESTED DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specificall

文件：237 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

High Current Power MOSFET N-Channel Enhancement Mode

文件：589.36 Kbytes 页数：5 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

文件：380.2 Kbytes 页数：2 Pages

ISC

无锡固电

High Current Power MOSFET N-Channel Enhancement Mode

文件：589.36 Kbytes 页数：5 Pages

IXYS

艾赛斯