N-Channel: Standard Power MOSFETs

·Breakdown voltages (VDSS) up to 4500V\n·Current ratings (ID25) ranging from 100mA to 250A\n·Ultra-low RDS(on) - as low as 7.5 milliohm\n·High power density\n·Easy to mount\n·PCB space savings\n·International standard and proprietary high voltage packages\n;

Littelfuse

力特

High Current Power MOSFET N-Channel Enhancement Mode

文件：589.36 Kbytes 页数：5 Pages

IXYS

艾赛斯

N-CHANNEL 150V - 0.02Ω - 75A TO-220/D²PAK/TO-247 LOW GATE CHARGE STripFET™ MOSFET

TYPICAL RDS(on) = 20 mΩ
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING REPEATIBILITY
EXCELLENT FIGURE OF MERIT (RDS*Qg)
100 AVALANCHE TESTED DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specificall

文件：237 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 150V - 0.02Ω - 75A TO-220/D²PAK/TO-247 LOW GATE CHARGE STripFET™ MOSFET

TYPICAL RDS(on) = 20 mΩ
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING REPEATIBILITY
EXCELLENT FIGURE OF MERIT (RDS*Qg)
100 AVALANCHE TESTED DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specificall

文件：237 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 150V - 0.02Ω - 75A TO-220/D²PAK/TO-247 LOW GATE CHARGE STripFET™ MOSFET

TYPICAL RDS(on) = 20 mΩ
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING REPEATIBILITY
EXCELLENT FIGURE OF MERIT (RDS*Qg)
100 AVALANCHE TESTED DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specificall

文件：237 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体