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IXTH75N15

High Current Power MOSFET N-Channel Enhancement Mode

文件:589.36 Kbytes 页数:5 Pages

IXYS

艾赛斯

IXTH75N15

isc N-Channel MOSFET Transistor

文件:380.2 Kbytes 页数:2 Pages

ISC

无锡固电

IXTT75N15

High Current Power MOSFET N-Channel Enhancement Mode

文件:589.36 Kbytes 页数:5 Pages

IXYS

艾赛斯

STB75N15

N-CHANNEL 150V - 0.02Ω - 75A TO-220/D²PAK/TO-247 LOW GATE CHARGE STripFET™ MOSFET

 TYPICAL RDS(on) = 20 mΩ  GATE CHARGE MINIMIZED  VERY LOW INTRINSIC CAPACITANCES  VERY GOOD MANUFACTURING REPEATIBILITY  EXCELLENT FIGURE OF MERIT (RDS*Qg)  100 AVALANCHE TESTED DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specificall

文件:237 Kbytes 页数:10 Pages

STMICROELECTRONICS

意法半导体

STP75N15

N-CHANNEL 150V - 0.02Ω - 75A TO-220/D²PAK/TO-247 LOW GATE CHARGE STripFET™ MOSFET

 TYPICAL RDS(on) = 20 mΩ  GATE CHARGE MINIMIZED  VERY LOW INTRINSIC CAPACITANCES  VERY GOOD MANUFACTURING REPEATIBILITY  EXCELLENT FIGURE OF MERIT (RDS*Qg)  100 AVALANCHE TESTED DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specificall

文件:237 Kbytes 页数:10 Pages

STMICROELECTRONICS

意法半导体

详细参数

  • 型号:

    IXTH75N15

  • 功能描述:

    MOSFET 75 Amps 150V

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IXYS/艾赛斯
25+
TO-247
32000
IXYS/艾赛斯全新特价IXTH75N15即刻询购立享优惠#长期有货
询价
IXYS
21+
TO247
1516
十年信誉,只做原装,有挂就有现货!
询价
IXYS
24+
12
原装现货,可开13%税票
询价
IXYS
23+
TO-3P
5000
原装正品,假一罚十
询价
IXYS
25+
QFN
18000
原厂直接发货进口原装
询价
IXYS
23+
TO-3P
8560
受权代理!全新原装现货特价热卖!
询价
IXYS/艾赛斯
05+
TO247
24307
进口原管现货/30
询价
IXYS/艾赛斯
2022+
2790
全新原装 货期两周
询价
IXYS
1931+
N/A
18
加我qq或微信,了解更多详细信息,体验一站式购物
询价
IXYS/艾赛斯
2447
TO247
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
更多IXTH75N15供应商 更新时间2025-10-6 14:14:00