isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 28A@ TC=25℃ ·Drain Source Voltage -VDSS=250V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 65mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.53 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 250 V, 0.055 廓, 28 A, TO-220 MDmeshTM V Power MOSFET

文件：480.07 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

P-channel 30 V, 0.01 Ohm typ., 52 A STripFET H6 Power MOSFET in a TO-220 package

This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.\n • Very low on-resistance\n• Very low gate charge• High avalanche\n• Low gate drive power loss;

ST

意法半导体

N-channel 250 V, 0.055 Ω, 28 A, TO-220 MDmeshTM V Power MOSFET

ST

意法半导体

Package：TO-220-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET P-CHANNEL 30V 52A TO220

STMICROELECTRONICS

意法半导体