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STP28NM60ND中文资料N-channel 600 V, 0.120 Ohm typ., 24 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220 package数据手册ST规格书
STP28NM60ND规格书详情
描述 Description
These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters.
特性 Features
Intrinsic fast-recovery body diode
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Extremely high dv/dt and avalanche capabilities
技术参数
- 型号：
STP28NM60ND
- 制造商：
STMicroelectronics
- 功能描述：
N-CHANNEL 600 V, 0.120 OHM TYP., 24 A FDMESH(TM) II POWER MO - Rail/Tube
- 功能描述：
MOSFET N-CH 600V 24A TO-220AB
- 功能描述：
N-channel 600 V, 0.120 Ohm typ., 24 A, TO-220
- 功能描述：
N-channel 600 V 0 120 Ohm typ 24 A
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
20 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ST |
21+ |
TO-220 |
1609 |
只做原装,绝对现货,原厂代理商渠道,欢迎电话微信查 |
询价 | ||
ST |
14+ |
TO-220 |
880 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ST/意法半导体 |
24+ |
TO-220-3 |
16900 |
原装，正品 |
询价 | ||
ST |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
询价 | ||
ST/意法半导体 |
23+ |
TO-220-3 |
12700 |
买原装认准中赛美 |
询价 | ||
ST/意法 |
22+ |
N |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
询价 | ||
ST/意法半导体 |
21+ |
TO-220-3 |
8860 |
原装现货,实单价优 |
询价 | ||
ST原装 |
25+23+ |
TO-220 |
23897 |
绝对原装正品全新进口深圳现货 |
询价 | ||
ST/意法半导体 |
24+ |
TO-220-3 |
6000 |
全新原装深圳仓库现货有单必成 |
询价 |
