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STP16NE06L	文件：70.66 Kbytes Page：7 Pages	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE] POWER MOSFET DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONunique”SingleFeatureSize”processwherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandless	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
STP16NE06L/FP	文件：70.66 Kbytes Page：7 Pages	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE] POWER MOSFET DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONunique”SingleFeatureSize”processwherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandless	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
STP16NE06LFP	文件：70.66 Kbytes Page：7 Pages	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE] POWER MOSFET DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONunique”SingleFeatureSize”processwherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandless	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
P16NE06	文件：337.11 Kbytes Page：9 Pages	N-CHANNEL60V-0.08ohm-16A-TO-220/TO-220FPSTripFETPOWERMOSFET DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONuniqueSingleFeatureSizeprocesswherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlessc	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
P16NE06FP	文件：337.11 Kbytes Page：9 Pages	N-CHANNEL60V-0.08ohm-16A-TO-220/TO-220FPSTripFETPOWERMOSFET DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONuniqueSingleFeatureSizeprocesswherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlessc	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
STD16NE06	文件：91.87 Kbytes Page：9 Pages	N-CHANNEL60V-0.07ohm-16ADPAK/IPAKSTripFETPOWERMOSFET DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique”STripFET™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarkablemanufa	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
STD16NE06L	文件：55.15 Kbytes Page：5 Pages	N-CHANNEL60V-0.07ohm-16A-DPAKSTripFETPOWERMOSFET DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONuniqueSingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemarkableman	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
STP16NE06	文件：337.11 Kbytes Page：9 Pages	N-CHANNEL60V-0.08ohm-16A-TO-220/TO-220FPSTripFETPOWERMOSFET DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONuniqueSingleFeatureSizeprocesswherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlessc	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
STP16NE06FP	文件：70.66 Kbytes Page：7 Pages	N-CHANNELENHANCEMENTMODESINGLEFEATURESIZE]POWERMOSFET DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONunique”SingleFeatureSize”processwherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandless	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
STP16NE06FP	文件：337.11 Kbytes Page：9 Pages	N-CHANNEL60V-0.08ohm-16A-TO-220/TO-220FPSTripFETPOWERMOSFET DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONuniqueSingleFeatureSizeprocesswherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlessc	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团

详细参数

型号：
STP16NE06L
功能描述：
MOSFET TO-220 N-CH 60V 16A
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市昌和盛利电子有限公司	STP16NE06L	ST	23+	TO-220	8795		询价
深圳市特顺芯科技有限公司	STP16NE06L	ST		N/A	2000		询价
深圳市恒创达实业有限公司	STP16NE06L	ST	17+	TO-220	6200		询价
深圳市星佑电子有限公司	STP16NE06L	ST	05+	原厂原装	2449	只做全新原装真实现货供应	询价
千层芯半导体(深圳)有限公司	STP16NE06L	ST	17+	TO-220	12500	原装现货热卖	询价
深圳市振宏微科技有限公司	STP16NE06L	ST	23+	TO-220	5000	专做原装正品,假一罚百!	询价
深圳市百视威讯电子科技有限公司	STP16NE06L		23+	N/A	48700	正品授权货源可靠	询价
深圳市芯祺盛科技有限公司	STP16NE06L	ST	1746+	TO220	8862	深圳公司现货!特价支持工厂客户!提供样品!	询价
瀚佳科技(深圳)有限公司	STP16NE06L	ST	2020+	TO-220	16800	绝对原装进口现货,假一赔十,价格优势!?	询价
深圳兆威电子有限公司	STP16NE06L	ST/意法	23+	TO-220	90000	只做原厂渠道价格优势可提供技术支持	询价

更多STP16NE06L供应商更新时间2024-4-27 14:00:00

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