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STP19NB20

N-CHANNEL 200V - 0.15ohm - 19A - TO-220/TO-220FP/I2PAK PowerMESH??MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprieratyedgeterminationstructure,givesthelowestRDS(on)pera

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

STP19NB20FP

N-CHANNEL 200V - 0.15ohm - 19A - TO-220/TO-220FP/I2PAK PowerMESH??MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprieratyedgeterminationstructure,givesthelowestRDS(on)pera

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

STB19NB20

N-CHANNELENHANCEMENTMODEPowerMESH]MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofPowerMOSFETswithoutstandingperformance.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)perar

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

详细参数

  • 型号:

    STP19NB20

  • 功能描述:

    MOSFET N-Ch 200 Volt 19 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
ST
23+
TO-220
18689
询价
ST/进口原
17+
TO-220
6200
询价
ST
N/A
2400
询价
ST
17+
TO-220
12500
原装现货热卖
询价
SGS
16+
原厂封装
3050
原装现货假一罚十
询价
ST
06+
TO-220
10000
全新原装 绝对有货
询价
ST
16+
TO-220
10000
全新原装现货
询价
ST
2020+
TO-220
350000
100%进口原装正品公司现货库存
询价
ST
22+
TOP-220
2987
只售原装自家现货!诚信经营!欢迎来电!
询价
ST
23+
TO-220
8650
受权代理!全新原装现货特价热卖!
询价
更多STP19NB20供应商 更新时间2024-4-24 11:17:00