isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 4.4mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.51 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 40V - 0.0035廓 - 120A - D2PAK - TO-220 planar STripFET??Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema

文件：319.51 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-channel 40V - 0.0035Ω - 120A - D2PAK - TO-220 planar STripFET™ Power MOSFET

ST

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 4.0mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：348.91 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 40V - 0.0035廓 - 120A - D2PAK - TO-220 planar STripFET??Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema

文件：319.51 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体