isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.14Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.13 Kbytes 页数：2 Pages

ISC

无锡固电

N - CHANNEL 100V - 0.14 ohm - 16A - TO-220 POWER MOS TRANSISTOR

N - CHANNEL 100V - 0.14 Ω - 16A - TO-220 POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.14 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ HIGH dV/dt RUGGEDNESS ■ APPLICATION ORIENTED CHARACTE

文件：50.24 Kbytes 页数：5 Pages

STMICROELECTRONICS

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N-Channel 100-V (D-S) MOSFET

文件：939.26 Kbytes 页数：7 Pages

VBSEMI

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N-Channel MOSFET uses advanced SGT technology

文件：577.27 Kbytes 页数：4 Pages

DOINGTER

杜因特

N-Ch MOSFET

文件：1.15812 Mbytes 页数：5 Pages

WIINSOK

微硕半导体