STP11NM80FETIGBTIC资料使用说明书供应商报价-114ic电子网

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F11NM80	文件：908.99 Kbytes Page：22 Pages	N-channel800V,0.35Ω,11AMDmesh™PowerMOSFETinD²PAK,TO-220FP,I²PAK,TO-220,TO-247 Features ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance ■BestRDS(on)*Qgintheindustry Applications ■Switchingapplications Description TheseN-channelPowerMOSFETsare developedusingSTMicroelectronics' revolutionaryMDmesh™technology,which associatesth	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
I11NM80	文件：908.99 Kbytes Page：22 Pages	N-channel800V,0.35Ω,11AMDmesh™PowerMOSFETinD²PAK,TO-220FP,I²PAK,TO-220,TO-247 Features ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance ■BestRDS(on)*Qgintheindustry Applications ■Switchingapplications Description TheseN-channelPowerMOSFETsare developedusingSTMicroelectronics' revolutionaryMDmesh™technology,which associatesth	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
P11NM80	文件：908.99 Kbytes Page：22 Pages	N-channel800V,0.35Ω,11AMDmesh™PowerMOSFETinD²PAK,TO-220FP,I²PAK,TO-220,TO-247 Features ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance ■BestRDS(on)*Qgintheindustry Applications ■Switchingapplications Description TheseN-channelPowerMOSFETsare developedusingSTMicroelectronics' revolutionaryMDmesh™technology,which associatesth	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STB11NM80	文件：332.31 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=11A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforusein	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
STB11NM80	文件：582.11 Kbytes Page：14 Pages	N-CHANNEL800V-0.35ohm-11ATO-220/FP/D2PAK/TO-247MDmeshPowerMOSFET Description TheMDmesh™associatesthemultipledrainprocesswiththecompany’sPowerMesh™horizontallayoutassuringanoutstandinglowonresistance.Theadoptionofthecompany’sproprietarystriptechniqueyieldsoveralldynamicperformancethatissignificantlybetterthanthatofsimilar	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STB11NM80	文件：949.78 Kbytes Page：17 Pages	N-channel800V,0.35廓,11AMDmesh??PowerMOSFETTO-220,TO-220FP,D2PAK,TO-247	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STB11NM80	文件：467.13 Kbytes Page：17 Pages	N-channel800V-0.35廓-11A-TO-220/FP-D2PAK-TO-247MDmesh??PowerMOSFET	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STB11NM80	文件：908.99 Kbytes Page：22 Pages	N-channel800V,0.35Ω,11AMDmesh™PowerMOSFETinD²PAK,TO-220FP,I²PAK,TO-220,TO-247 Features ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance ■BestRDS(on)*Qgintheindustry Applications ■Switchingapplications Description TheseN-channelPowerMOSFETsare developedusingSTMicroelectronics' revolutionaryMDmesh™technology,which associatesth	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STF11NM80	文件：908.99 Kbytes Page：22 Pages	N-channel800V,0.35Ω,11AMDmesh™PowerMOSFETinD²PAK,TO-220FP,I²PAK,TO-220,TO-247 Features ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance ■BestRDS(on)*Qgintheindustry Applications ■Switchingapplications Description TheseN-channelPowerMOSFETsare developedusingSTMicroelectronics' revolutionaryMDmesh™technology,which associatesth	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STF11NM80	文件：949.78 Kbytes Page：17 Pages	N-channel800V,0.35廓,11AMDmesh??PowerMOSFETTO-220,TO-220FP,D2PAK,TO-247	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STF11NM80	文件：467.13 Kbytes Page：17 Pages	N-channel800V-0.35廓-11A-TO-220/FP-D2PAK-TO-247MDmesh??PowerMOSFET	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STF11NM80	文件：582.11 Kbytes Page：14 Pages	N-CHANNEL800V-0.35ohm-11ATO-220/FP/D2PAK/TO-247MDmeshPowerMOSFET Description TheMDmesh™associatesthemultipledrainprocesswiththecompany’sPowerMesh™horizontallayoutassuringanoutstandinglowonresistance.Theadoptionofthecompany’sproprietarystriptechniqueyieldsoveralldynamicperformancethatissignificantlybetterthanthatofsimilar	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STF11NM80	文件：322.55 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=11A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforusein	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
STI11NM80	文件：908.99 Kbytes Page：22 Pages	N-channel800V,0.35Ω,11AMDmesh™PowerMOSFETinD²PAK,TO-220FP,I²PAK,TO-220,TO-247 Features ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance ■BestRDS(on)*Qgintheindustry Applications ■Switchingapplications Description TheseN-channelPowerMOSFETsare developedusingSTMicroelectronics' revolutionaryMDmesh™technology,which associatesth	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STP11NM80	文件：908.99 Kbytes Page：22 Pages	N-channel800V,0.35Ω,11AMDmesh™PowerMOSFETinD²PAK,TO-220FP,I²PAK,TO-220,TO-247 Features ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance ■BestRDS(on)*Qgintheindustry Applications ■Switchingapplications Description TheseN-channelPowerMOSFETsare developedusingSTMicroelectronics' revolutionaryMDmesh™technology,which associatesth	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STP11NM80	文件：582.11 Kbytes Page：14 Pages	N-CHANNEL800V-0.35ohm-11ATO-220/FP/D2PAK/TO-247MDmeshPowerMOSFET Description TheMDmesh™associatesthemultipledrainprocesswiththecompany’sPowerMesh™horizontallayoutassuringanoutstandinglowonresistance.Theadoptionofthecompany’sproprietarystriptechniqueyieldsoveralldynamicperformancethatissignificantlybetterthanthatofsimilar	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STP11NM80	文件：467.13 Kbytes Page：17 Pages	N-channel800V-0.35廓-11A-TO-220/FP-D2PAK-TO-247MDmesh??PowerMOSFET	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STP11NM80	文件：949.78 Kbytes Page：17 Pages	N-channel800V,0.35廓,11AMDmesh??PowerMOSFETTO-220,TO-220FP,D2PAK,TO-247	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STP11NM80	文件：331.87 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=11A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforusein	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
STW11NM80	文件：435.48 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=11A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforusein	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC

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供应商	型号	品牌	批号	封装	库存	备注	价格
贸泽芯城（深圳）电子科技有限公司	STP11NM80FETIGBTIC	ST/意法	21+		15000	原厂VIP渠道,亚太地区一级代理商,可提供更多数量!	询价
深圳兆威电子有限公司	STP11NM80IC	ST/意法	23+	TO-220	90000	只做原厂渠道价格优势可提供技术支持	询价
深圳市百域芯科技有限公司	STP11NM80IC	ST/意法	21+	TO-220	2500	优势供应实单必成可开增值税13点	询价
深圳市源泽芯电子有限公司	STP11NM80IC	ST/意法	20+	TO-220	1000	进口原装现货假一赔万力挺实单	询价
深圳市华鑫创达电子有限公司	STP11NM80IC	ST/意法	22+	TO-220	10000	公司原装现货,欢迎咨询	询价
深圳市中联芯电子有限公司	STP11NM80IC	ST/意法	23+	TO-220	5000	原装正品实单必成	询价
深圳市得捷芯城科技有限公司	STP11NM80MOSFET或IGBT	ST/意法	23+	NA/	21	优势代理渠道,原装正品,可全系列订货开增值税票	询价
深圳市汇莱威科技有限公司	STP11NM80MOSFET或IGBT开关IC	ST/意法		TO-220AB	265209	假一罚十,原包原标签,常备现货	询价
深圳市威尔健半导体有限公司	STP11NM80MOSFET或IGBT开关IC	ST/意法	23+	TO220	50000	全新原装正品现货,支持订货	询价
深圳市湘达电子科技有限公司	STP11NM80MOSFET或IGBT开关IC	ST/意法	2022+	TO-220AB	6600	只做原装,假一罚十,长期供货。	询价

更多STP11NM80FETIGBTIC供应商更新时间2024-5-24 11:03:00

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