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STP16NE06

N - CHANNEL 60V - 0.08 ohm - 16A - TO-220/TO-220FP STripFET POWER MOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONuniqueSingleFeatureSizeprocesswherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlessc

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

STP16NE06FP

N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE] POWER MOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONunique”SingleFeatureSize”processwherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandless

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

STP16NE06FP

N - CHANNEL 60V - 0.08 ohm - 16A - TO-220/TO-220FP STripFET POWER MOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONuniqueSingleFeatureSizeprocesswherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlessc

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

STP16NE06L

N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE] POWER MOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONunique”SingleFeatureSize”processwherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandless

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

STP16NE06L/FP

N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE] POWER MOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONunique”SingleFeatureSize”processwherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandless

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

STP16NE06LFP

N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE] POWER MOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONunique”SingleFeatureSize”processwherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandless

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

P16NE06

N-CHANNEL60V-0.08ohm-16A-TO-220/TO-220FPSTripFETPOWERMOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONuniqueSingleFeatureSizeprocesswherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlessc

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

P16NE06FP

N-CHANNEL60V-0.08ohm-16A-TO-220/TO-220FPSTripFETPOWERMOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONuniqueSingleFeatureSizeprocesswherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlessc

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

STD16NE06

N-CHANNEL60V-0.07ohm-16ADPAK/IPAKSTripFETPOWERMOSFET

DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique”STripFET™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarkablemanufa

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

STD16NE06L

N-CHANNEL60V-0.07ohm-16A-DPAKSTripFETPOWERMOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONuniqueSingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemarkableman

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

详细参数

  • 型号:

    STP16NE06

  • 功能描述:

    MOSFET TO-220 N-CH 60V 16A

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商 型号 品牌 批号 封装 库存 备注 价格
ST
2021+
TO-220
6800
原厂原装,欢迎咨询
询价
ST
23+
TO-220
8795
询价
STM
23+
TO220/3
7000
绝对全新原装!100%保质量特价!请放心订购!
询价
ST
17+
TO-220
6200
询价
ST
23+
TO220
8500
全新原装现货,公司只做原装。
询价
ST
17+
TO-220
10000
原装现货热卖
询价
ST
0233+
TO-220
240
原装
询价
STM
05+
TO-220
12000
询价
ST
16+
TO-220
10000
全新原装现货
询价
ST
2022+
TO-220
5000
只做原装公司现货
询价
更多STP16NE06供应商 更新时间2024-3-28 14:00:00