Medium current, high performance, low voltage NPN transistor

Description The devices are manufactured in low voltage NPN planar technology with “base island” layout. the resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ Very low collector to emitter saturation voltage ■ DC current gain, hFE

文件：141.82 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

丝印：N878；Package：SOT-223；High current, high performance, low voltage NPN transistors

Description The devices are manufactured in low voltage NPN planar technology with “base island” layout. the resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ Very low collector to emitter saturation voltage ■ DC current gain, hFE

文件：261.18 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

Package：TO-261-4，TO-261AA；包装：带盒（TB） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 30V 5A SOT223

STMICROELECTRONICS

意法半导体

SWITCH MODE DC/DC POWER CONVERSION TRANSFORMERS

文件：41.76 Kbytes 页数：4 Pages

PMI

VIM-878

文件：39.16 Kbytes 页数：1 Pages

VARITRONIX

京东方精电

ADS1131REF and ADS1231REF

文件：623.24 Kbytes 页数：31 Pages

TI

德州仪器