丝印：N878；Package：SOT-223；High current, high performance, low voltage NPN transistors

Description The devices are manufactured in low voltage NPN planar technology with “base island” layout. the resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ Very low collector to emitter saturation voltage ■ DC current gain, hFE

文件：261.18 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

Medium current, high performance, low voltage NPN transistor

Description The devices are manufactured in low voltage NPN planar technology with “base island” layout. the resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ Very low collector to emitter saturation voltage ■ DC current gain, hFE

文件：141.82 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体