N-CHANNEL 40V - 0.0043ohm - 120A TO-220/D2PAK/I2PAK STripFET??II POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema

文件：584.86 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

AEC-Q101 qualified

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema

文件：1.12529 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

N-Channel 40-V (D-S) MOSFET

文件：970.85 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

N-channel 40V - 0.0043ohm - 120A - TO-220 - D2PAK STripFET TM II Power MOSFET

文件：394.68 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N沟道40 V、0.0043 Ohm典型值、120 A STripFET(TM) II功率MOSFET，TO-220封装

These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and c • AEC-Q101 qualified \n• Exceptional dv/dt capability \n• 100% avalanche tested \n• Low gate charge;

ST

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N-CHANNEL 40V - 0.0036 ohm - 100A TO-220 STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

文件：268.03 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体