isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 8.6A@ TC=25℃ ·Drain Source Voltage -VDSS= 700V(Min) -RDS(on) = 0.85Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.55 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 700V - 0.75ohm - 8.6A TO-220/TO-220FP Zener-Protected SuperMESH?줡ower MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

文件：384.33 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

丝印：P10NK70Z；Package：TO-220；N-CHANNEL 700V - 0.75廓 - 8.6A - TO220-TO220FP Zener-Protected SuperMESH??MOSFET

文件：279.77 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 700V - 0.75ohm - 8.6A TO-220/TO-220FP Zener-Protected SuperMESH?줡ower MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

文件：384.33 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

丝印：P10NK70ZFP；Package：TO-220FP；N-CHANNEL 700V - 0.75廓 - 8.6A - TO220-TO220FP Zener-Protected SuperMESH??MOSFET

文件：279.77 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

文件：297.15 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 700V - 0.75廓 - 8.6A - TO220-TO220FP Zener-Protected SuperMESH??MOSFET

文件：279.77 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 700V - 0.75ohm - 8.6A TO-220/TO-220FP Zener-Protected SuperMESH™Power MOSFET

ST

意法半导体

N沟道700 V - 0.75 Ohm - 8.6 A - TO-220FP有齐纳管保护的SuperMESH功率MOSFET

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. • VERY GOOD MANUFACTURING REPEABILITY \n• EXTREMELY HIGH dv/dt CAPABILITY \n• 100% AVALANCHE TESTED \n• IMPROVED ESD CAPABILITY \n• VERY LOW INTRINSIC CAPACITANCES \n• GATE CHARGE MINIMIZED;

ST

意法半导体