STGW35HF60W中文资料35 A, 600 V Ultrafast IGBT数据手册ST规格书

描述 Description

This Ultrafast IGBT is developed using a new planar technology to yield a device with tighter switching energy variation (Eoff) versus temperature. The suffix \"W\" denotes a subset of products designed for high switching frequency operation (over 100 kHz).

特性 Features

• Improved Eoffat elevated temperature
• Minimal tail current
• Low conduction losses

简介

STGW35HF60W属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的STGW35HF60W晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。