STGW30NC120HD中文资料N沟道1200 V、30 A超快PowerMESH IGBT数据手册ST规格书

描述 Description

Using the latest high voltage technology based on its patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, with outstanding performances. The suffix “H” identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.

特性 Features

• Ideal for soft switching application
• Low on-losses
• High current capability
• Low on-voltage drop(Vcesat)
• Low gate charge
• High input impedance(voltage driven)

简介

STGW30NC120HD属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的STGW30NC120HD晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。