STGW20V60F中文资料600 V、20 A超高速沟槽栅场截止V系列IGBT数据手册ST规格书

描述 Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

特性 Features

• Maximum junction temperature: TJ = 175 °C
• Tail-less switching off
• VCE(sat) = 1.8 V (typ.) @ IC = 20 A
• Tight parameter distribution
• Safe paralleling
• Low thermal resistance

简介

STGW20V60F属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的STGW20V60F晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。