STGW30N120KD中文资料30 A, 1200 V short circuit rugged IGBT with Ultrafast diode数据手册ST规格书

描述 Description

This high voltage and short-circuit rugged IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low ON-state behavior.

特性 Features

Low on-losses
High current capability
Low gate charge
Short circuit withstand time 10 μs
IGBT co-packaged with Ultrafast free-wheeling diode

简介

STGW30N120KD属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的STGW30N120KD晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。