STGW30NC60KD数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

描述 Description

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.

特性 Features

• Low on-voltage drop (VCE(sat))
• Short circuit withstand time 10 μs
• Low Cres / Cies ratio (no cross conduction susceptibility)
• IGBT co-packaged with ultra fast free-wheeling diode

简介

STGW30NC60KD属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的STGW30NC60KD晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。